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BR605 OM7627NM LET9060C MP8786AN SMBJ13CA CD510825 2230004 HT82M
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  Datasheet File OCR Text:
 Transys
Electronics
LIMITED
SOT-23 Formed SMD Package
BAV70
SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES
High speed switching diode pair, common cathode
Marking BAV70 = A4
PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m
Pin configuration 1 = ANODE 2 = ANODE 3 = CATHODE
2
1
3
ABSOLUTE MAXIMUM RATINGS Continuous reverse voltage Repetitive peak reverse voltage Repetitive peak forward current Junction temperature Forward voltage at IF = 50 mA Reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 measured at IR = 1 mA Recovery charge when switched from IF = 10 mA to VR = 5 V; RL = 100
VR VRRM IFRM Tj VF
max. max. max. max. <
70 75 450 150 1,0
V V mA C V
trr Qs
< <
4 ns 45 pc
BAV70
RATINGS (per diode) Limiting values Continuous reverse voltage Repetitive peak reverse voltage Forward current (DC) Repetitive peak forward current Non-repetitive peak forward current (per crystal) t = 1 s t = 1 ms t=1s Storage temperature range Junction temperature THERMAL RESISTANCE From junction to ambient Tj = 25 C unless otherwise specified Forward voltage IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA Reverse current VR = 25 V; Tj = 150C VR = 70 V VR = 70 V; Tj = 150C Diode capacitance VR = 0; f = 1 MHz Forward recovery voltage when switched to IF = 10 mA; tr = 20 ns
VR VRRM IF IFRM
max. max. max. max.
70 75 215 450
V V mA mA
IFSM IFSM IFSM Tstg Tj
max. 4 max. 1 max. 0,5 -55 to +150 max. 150
A A A C C
Rthj-a
=
500 K/W
VF VF VF VF IR IR IR Cd Vfr
< < < < < < < < <
715 855 1000 1250
mV mV mV mV
60 A 2.5 A 100 A 1,5 pF 1,75 V


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